Semiconductor IC device fabricating method

Details Semiconductor IC device fabricating method Semiconductor IC device fabricating method

1997-02-24

1998-11-17

Baxter, Janet C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430326, 430330, G03C 500

Patent

active

058374230

ABSTRACT:
Either a chemical amplification positive electron beam resist film or a chemical amplification negative electron beam resist film is used selectively according to an IC fabricating process when forming a minute IC pattern by using, as a mask, a resist pattern formed by irradiating the chemical amplification electron beam resist film formed on a semiconductor wafer with an electron beam, to form the minute IC pattern quickly in a high accuracy and to carry out an electron beam direct writing at a high throughput. The chemical amplification electron beam resist film is coated with a conductive polymer film before irradiating the same with the electron beam to prevent the charging-up of the chemical amplification electron beam resist film and to stabilize the chemical amplification electron beam resist film during a electron beam writing process.

REFERENCES:
patent: 5372914 (1994-12-01), Naito et al.
patent: 5614715 (1997-03-01), Okamoto

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