Semiconductor heat-dissipating substrate, and manufacturing...

Details Semiconductor heat-dissipating substrate, and manufacturing... Semiconductor heat-dissipating substrate, and manufacturing...

2007-02-20

2007-02-20

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257S713000, C257S719000, C257S706000, C257S707000, C257SE33075, C257SE31131

Reexamination Certificate

active

11160691

ABSTRACT:
In a semiconductor heat-dissipating substrate made of a Cu—W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 μm or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 μm or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.

REFERENCES:
patent: 6271585 (2001-08-01), Osada et al.
patent: 64-89350 (1989-04-01), None
patent: 11-284112 (1999-10-01), None

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