Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1992-10-20
1994-01-25
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118719, 118730, 156643, B44C 122, C03C 1500, C23C 1600
Patent
active
052812952
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to semiconductor fabrication system including a plurality of processing stations for film formation and etching, concurrently or continuously.
BACKGROUND ART
Conventionally, as shown in FIG. 5, in formation of insulating films or conductive films on wafers using CVD equipment and RIE (Reactive Ion Etching) equipment in a plurality of processing stations, such as multiple chambers, a processing gas is uniformly supplied to gas dispersing devices 2a to 2e respectively provided at the processing stations for equalized film formation rates, etching rates and the like in the respective processing stations. Specifically, processing gas supply sources 1a to 1e are respectively provided for the gas dispersing devices 2a to 2e, and sets of automatic flow rate controllers (AFC) 3a/4a/5a/6a to 3e/4e/5e/6e for automatically controlling the supply amounts of the processing gases are respectively provided for the processing gas supply sources 1a to 1e.
However, if the number of the gas dispersing devices 2a to 2e is increased, the number of processing gas supply sources 1a to 1e, the AFCs 3a/4a/5a/6a to 3e/4e/5e/6e and the like must be increased to a number corresponding to the number of the gas dispersing devices 2a to 2e, and consequently, the above construction has the disadvantages of increasing the cost and of complicating the maintenance of the equipment.
In analyzing the above problem, it may be considered that the processing gas supply sources 1a to 1e are united and also that the processing gas is branched into the gas dispersing devices 2a to 2e; however, since the conductances of respective branch pipings including the gas dispersing devices 2a to 2e are usually different from each other, it is difficult to uniformly supply the processing gas into each of the gas dispersing devices 2a to 2e. Also, even if the conductances of the branch pipings including the gas dispersing devices 2a to 2e are similar to each other, in the case of continuously executing the processing, it often occurs at the initial and final stages that the processing gas is supplied only to a portion of the gas dispersing devices and the supply of the processing gas to the remaining portion of the gas dispersing devices is stopped, which also affects the total amount of the processing gas to the gas dispersing devices. Namely, in the above case, the total amount of the processing gas will fluctuate more than where the processing gas is supplied to all of the gas dispersing devices 2a to 2e. Therefore, the film formation rate and the like are changed, thereby making it impossible to maintain uniformity of the thickness of the formed film.
Taking the above problems into consideration, the present invention has as its object provision of a semiconductor fabrication system capable of supplying equal amounts of a processing gas, for film formation or etching, from one gas supply source to the various processing stations, and thereby achieve uniform wafer processing at each processing station.
SUMMARY OF THE INVENTION
In a first aspect of the present invention, there is provided a semiconductor fabrication apparatus including a plurality of processing stations, e.g. chambers, each station including a processing gas introducing port for processing wafers by contact with a processing gas; a processing gas supply source for supplying the processing gas; a common header connected to the process gas supply source for carrying the processing gas; a plurality of branch pipes branched from the common header to the plurality of the processing stations; outlet pipes, each having one end connected to the branch pipes and the other end connected to the gas introducing port; and a plurality of first flow rate control means respectively provided on the introducing ports for controlling the flow rates of the processing gas. Accordingly, a single processing gas supply source is provided, and a plurality of the branch pipes and outlet pipes are provided corresponding to a plurality of processing stations. Furthe
REFERENCES:
patent: 4715921 (1987-12-01), Maher et al.
patent: 5013385 (1991-05-01), Maher et al.
patent: 5133284 (1992-07-01), Thomas et al.
patent: 5183510 (1993-02-01), Kimura
Hirose Mitsuo
Maeda Kazuo
Ohira Kouichi
Alcan-Tech Co., Inc.
Canon Sales Co., Inc.
Powell William A.
Semiconductor Process Laboratory Co. Ltd.
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