Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-12
2008-11-11
Toledo, Fernando L (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S465000, C438S613000
Reexamination Certificate
active
07449406
ABSTRACT:
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.
REFERENCES:
patent: 5629564 (1997-05-01), Nye et al.
patent: 5959363 (1999-09-01), Yamada et al.
patent: 6107164 (2000-08-01), Chuchi
patent: 6467674 (2002-10-01), Mihara
patent: 6472249 (2002-10-01), Kuwabara
patent: 6476503 (2002-11-01), Imamura et al.
patent: 6541366 (2003-04-01), Chin et al.
patent: 6596618 (2003-07-01), Narayanan et al.
patent: 6600234 (2003-07-01), Kuwabara et al.
patent: 6639299 (2003-10-01), Aoki
patent: 6683375 (2004-01-01), Joshi et al.
patent: 6774495 (2004-08-01), Kim
patent: 6818545 (2004-11-01), Lee et al.
patent: 6888209 (2005-05-01), Jobetto
patent: 7135770 (2006-11-01), Nishiyama et al.
patent: 7268438 (2007-09-01), Nishiyama et al.
patent: 2001/0004133 (2001-06-01), Ihara
patent: 2002/0017730 (2002-02-01), Tahara et al.
patent: 2002/0132461 (2002-09-01), Kizaki
patent: 2002/0149086 (2002-10-01), Aoki
patent: 2002/0192935 (2002-12-01), Joshi et al.
patent: 2003/0096495 (2003-05-01), Ihara et al.
patent: 2003/0134233 (2003-07-01), Su et al.
patent: 2004/0137724 (2004-07-01), Joshi et al.
patent: 1054237 (2000-07-01), None
patent: 1326225 (2001-12-01), None
patent: 53-080438 (1978-07-01), None
patent: 62-067826 (1987-03-01), None
patent: 1-187948 (1989-07-01), None
patent: 2-253626 (1990-10-01), None
patent: 3-22437 (1991-01-01), None
patent: 5-335313 (1993-12-01), None
patent: 8-102467 (1996-04-01), None
patent: 11-150090 (1999-06-01), None
patent: 2000-208547 (2000-07-01), None
patent: 2000-228417 (2000-08-01), None
patent: 2000-299339 (2000-10-01), None
patent: 2000-315706 (2000-11-01), None
patent: 2000-323510 (2000-11-01), None
patent: 2001-156097 (2001-06-01), None
patent: 2001-284382 (2001-10-01), None
patent: 2001-298342 (2001-10-01), None
patent: 2001-319940 (2001-11-01), None
Nishiyama Tomohiro
Tago Masamoto
NEC Corporation
Sughrue & Mion, PLLC
Toledo Fernando L
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