Semiconductor diode and method therefor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE27040, C438S328000

Reexamination Certificate

active

10966519

ABSTRACT:
In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate.

REFERENCES:
patent: 4594602 (1986-06-01), Iimura et al.
patent: 5181083 (1993-01-01), Pezzani
patent: 6727525 (2004-04-01), Goerlach
patent: 6870202 (2005-03-01), Oka
patent: 2003/0155644 (2003-08-01), Hirao et al.
patent: 2004/0164403 (2004-08-01), Hirao et al.
patent: 2005/0074197 (2005-04-01), Tada et al.

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