Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2008-05-27
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S371000, C257SE27064, C257SE29128
Reexamination Certificate
active
07378713
ABSTRACT:
Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.
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Hsu Peng-Fu
Jin Ying
Lin Huan-Just
Mor Yi-Shien
Tao Hun-Jan
Mandala Jr. Victor A.
Pert Evan
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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