Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2010-12-28
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257SE29113, C257S349000
Reexamination Certificate
active
07859064
ABSTRACT:
A semiconductor device may include a substrate, an active semiconductor region of the substrate, and a gate electrode. The active semiconductor region may include a channel region between first and second junction regions. The channel region may include a first semiconductor material, the first and second junction regions may include a second semiconductor material, and the first and second semiconductor materials may be different. The gate electrode may be on the channel region with portions of the first and second junction regions being free of the gate electrode.
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Korean Office Action for Korean Patent Application No. 10-2004-0058785 mailed on Feb. 28, 2006.
Kim Dong-won
Oh Chang-woo
Park Dong-gun
Suk Sung-dae
Mandala Victor A
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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