Semiconductor devices including a dielectric layer

Details Semiconductor devices including a dielectric layer Semiconductor devices including a dielectric layer

2011-08-02

2011-08-02

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000, C257S405000, C257S406000, C257S410000, C257S411000, C257SE29162, C257SE29168, C257SE29164, C257SE29165

Reexamination Certificate

active

07989877

ABSTRACT:
A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.

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