Semiconductor devices having tunnel and gate insulating layers

Details Semiconductor devices having tunnel and gate insulating layers Semiconductor devices having tunnel and gate insulating layers

2011-02-22

2011-02-22

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29300

Reexamination Certificate

active

07893482

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.

REFERENCES:
patent: 6417048 (2002-07-01), Tsemg
patent: 09307081 (1997-11-01), None
patent: 2003188291 (2003-07-01), None
patent: 2005317645 (2005-11-01), None
patent: 10200500000190 (2005-01-01), None
patent: 105005046063 (2005-05-01), None
patent: 10200500073370 (2005-07-01), None
patent: 1020060068848 (2006-06-01), None
Notice of Allowance for Korean Patent Application 10-2006-0091967; Jan. 24, 2008.

Affiliated with

Also associated with

Rating

Semiconductor devices having tunnel and gate insulating layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having tunnel and gate insulating layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having tunnel and gate insulating layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2641900