Semiconductor devices having strained dual channel layers

Details Semiconductor devices having strained dual channel layers Semiconductor devices having strained dual channel layers

2006-11-21

2006-11-21

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S938000

Reexamination Certificate

active

07138310

ABSTRACT:
A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.

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