Semiconductor devices having recessed structures and methods...

Details Semiconductor devices having recessed structures and methods... Semiconductor devices having recessed structures and methods...

2006-11-30

2010-02-09

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C257SE27092, C257SE21396

Reexamination Certificate

active

07659163

ABSTRACT:
A method for forming a semiconductor device is provided. The method includes providing a substrate having a plurality of protrusions projecting from the substrate; forming a silicon layer over the substrate and each protrusion; performing an anisotropic etching to transfer the silicon layer into a silicon spacer positioned on a side wall of each protrusion; forming an oxide layer over the silicon spacer; and etching the substrate to form a recess on the substrate by using the oxide layer as a mask.

REFERENCES:
patent: 7005698 (2006-02-01), Lin et al.
patent: 2006/0270176 (2006-11-01), Lee et al.

Affiliated with

Also associated with

Rating

Semiconductor devices having recessed structures and methods... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having recessed structures and methods..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having recessed structures and methods... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4171757