Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-06
2006-06-06
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S283000
Reexamination Certificate
active
07056776
ABSTRACT:
A semiconductor device has at least two different gate electrodes. The two different gate electrodes include a first gate electrode on a first gate insulation layer. The first gate electrode includes a first metal-containing conductive pattern on the first gate insulation layer and a second metal-containing conductive pattern. A second gate electrode is provided on a second gate insulation layer and includes a third metal-containing conductive material on the second gate insulation layer. The first metal-containing conductive pattern and the third metal-containing conductive pattern have different work functions from each other. A surface of the second metal-containing conductive pattern and a surface of the third metal-containing conductive pattern are substantially planar. Methods of fabrication such semiconductor devices are also provided.
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Choi Gil-Heyun
Kang Sang-Bom
Lee You-Kyoung
Park Seong-Geon
Dang Phuc T.
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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