Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-17
2010-11-09
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S390000, C257S394000, C257S506000, C257SE27107
Reexamination Certificate
active
07829959
ABSTRACT:
In a semiconductor device having line type active regions and a method of fabricating the semiconductor device, the semiconductor device includes a device isolation layer which defines the line type active regions in a in a semiconductor substrate. Gate electrodes which are parallel to each other and intersect the line type active regions are disposed over the semiconductor substrate. Here, the gate electrodes include both a device gate electrode and a recessed device isolation gate electrode. Alternatively, each of the gate electrodes is constituted of a device gate electrode and a plan type device isolation gate electrode, and a width of the plan type device isolation gate electrode greater than a width of the device gate electrode.
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Application and Prosecution history of U.S. Appl. No. 11/353,494, filed Feb. 14, 2006, by Kye-Hee Yeom, Entitled “Semiconductor Devices Having Line Type Active Regions and Methods of Fabricating the Same”, which is stored in the United States Patent and Trademark Office (USPTO) Image File Wrapper (IFW) System.
Mills & Onello LLP
Monbleau Davienne
Rodela Eduardo A
Samsung Electronics Co,. Ltd.
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