Semiconductor devices having high conductivity gate...

Details Semiconductor devices having high conductivity gate... Semiconductor devices having high conductivity gate...

2008-07-29

2008-07-29

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S207000, C257S208000, C257S211000, C257S327000, C257S336000, C257S344000, C257S377000, C257S408000, C257S413000, C257S900000

Reexamination Certificate

active

10777297

ABSTRACT:
Semiconductor devices that include a semiconductor substrate and a gate line are provided. The gate line is on the semiconductor substrate and includes a gate insulation pattern and a gate electrode which are stacked on the substrate in the order named. A spacer is on a sidewall of the gate line. A conductive line pattern is on the gate line. The conductive line pattern is parallel with the gate line and is electrically connected to the gate electrode.

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