Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Patent
1998-10-30
2000-07-04
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
257737, 257738, 257773, 257780, 257781, 257784, H01L 2348
Patent
active
060843128
ABSTRACT:
A semiconductor device having a double pad structure, and a method of manufacturing the same, allows a pad size required for a wire-bonding or a ball-bonding process with highly-integrated semiconductor devices to be obtained. The semiconductor device having a double pad structure includes a cell-portion having a certain circuit pattern on a semiconductor substrate and a peri-portion having a plurality of pads formed around the cell-portion for the electrical contact of the certain circuit pattern with the outside circuits. The semiconductor device further includes: an intermediate insulating layer formed on the semiconductor substrate; an uppermost metallic conductive pattern formed on the intermediate insulating layer within the cell-portion; a first pad pattern formed on the intermediate insulating layer within the peri-portion and preferably being made of a same material as the uppermost metallic conductive pattern; a passivation layer formed throughout the semiconductor substrate for a portion of the first pad patterns to be exposed; and a second pad pattern formed on the passivation layer including the exposed portion of each of the first pad pattern, the size of a pad of the second pad pattern being bigger than that of the first pad pattern. Preferably, the second pad pattern extends over the cell region.
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Chambliss Alonzo
Chaudhuri Olik
Samsung Electronics Co,. Ltd.
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