Semiconductor devices having contact plugs including...

Details Semiconductor devices having contact plugs including... Semiconductor devices having contact plugs including...

2007-02-13

2007-02-13

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S381000, C257S395000, C257S774000

Reexamination Certificate

active

10982113

ABSTRACT:
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.

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English Translation of Korean Office Action dated Mar. 23, 2004.

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