Semiconductor devices having capacitors of...

Details Semiconductor devices having capacitors of... Semiconductor devices having capacitors of...

2006-12-05

2006-12-05

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S197000, C438S238000, C438S239000, C438S243000, C257SE21396, C257S301000, C257S303000

Reexamination Certificate

active

07144772

ABSTRACT:
A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.

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patent: 2002-0002599 (2002-01-01), None

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