Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S208000, C257S209000, C257S390000, C257S391000, C257SE29309
Reexamination Certificate
active
11240544
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.
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Notice to Submit a Response for Korean Patent Application No. 10-2004-0107993 mailed on Feb. 28, 2006.
Cho Eun-suk
Cho Hye-jin
Kim Tae-yong
Lee Choong-ho
Lee Chul
Myers Bigel Sibley & Sajovec P.A.
Rodela Eduardo A.
Samsung Electronics Co,. Ltd.
Tran Minhloan
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