Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-04
2010-10-12
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23015, C257SE23020, C257SE23021
Reexamination Certificate
active
07811921
ABSTRACT:
A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.
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Ahn Chang-Moon
Choi Joong-Sup
Kang Wi-Seob
Lee Seung-Kun
Nam Chang-Hyeon
Harrison Monica D
Monbleau Davienne
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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