Semiconductor devices having a recessed active edge

Details Semiconductor devices having a recessed active edge Semiconductor devices having a recessed active edge

2010-01-07

2010-11-23

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C257SE29260, C438S270000

Reexamination Certificate

active

07838929

ABSTRACT:
A semiconductor device having a recessed active edge is provided. The semiconductor devices include an isolation layer disposed in a substrate to define an active region. A gate electrode is disposed to cross over the active region. A source region and a drain region are disposed in the active region on both sides of the gate electrode. A recessed region is disposed under the gate electrode and on an edge of the active region adjacent to the isolation layer. A bottom of the recessed region may be sloped down toward the isolation layer. The gate electrode may further extend into and fill the recessed region. That is, a gate extension may be disposed in the recessed region. A method of fabricating the semiconductor device is also provided.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 6611027 (2003-08-01), Ichikawa
patent: 6844591 (2005-01-01), Tran
patent: 2003/0085435 (2003-05-01), Wang
patent: 2004/0072412 (2004-04-01), Kim
patent: 2005/0040475 (2005-02-01), Jang et al.
patent: 2005/0087832 (2005-04-01), Park
patent: 10-2005---1-152 (2005-01-01), None

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