Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-02-04
2011-11-15
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C257S296000, C257SE21648, C257SE21646
Reexamination Certificate
active
08058126
ABSTRACT:
Methods of forming semiconductor devices that include one or more container capacitors include anchoring an end of a conductive member to a surrounding lattice material using an anchor material, which may be a dielectric. The anchor material may extend over at least a portion of an end surface of the conductive member, at least a portion of the lattice material, and an interface between the conductive member and the lattice material. In some embodiments, the anchor material may be formed without significantly covering an inner sidewall surface of the conductive member. Furthermore, in some embodiments, a barrier material may be provided over at least a portion of the anchor material and over at least a portion of an inner sidewall surface of the conductive member. Novel semiconductor devices and structures are fabricated using such methods.
REFERENCES:
patent: 5661064 (1997-08-01), Figura et al.
patent: 5889300 (1999-03-01), Figura et al.
patent: 5891768 (1999-04-01), Figura et al.
patent: 6238969 (2001-05-01), Figura et al.
patent: 6507064 (2003-01-01), Tang et al.
patent: 6599799 (2003-07-01), Tang et al.
patent: 6696336 (2004-02-01), DeBoer et al.
patent: 6790725 (2004-09-01), Coursey
patent: 6974993 (2005-12-01), Coursey
patent: 7105403 (2006-09-01), Graettinger et al.
patent: 7109089 (2006-09-01), Torek et al.
patent: 7125781 (2006-10-01), Manning et al.
patent: 7214978 (2007-05-01), Torek et al.
patent: 7282756 (2007-10-01), Agarwal et al.
patent: 7329576 (2008-02-01), Sandhu et al.
patent: 2001/0000492 (2001-04-01), Figura
patent: 2001/0001730 (2001-05-01), Figura
patent: 2001/0038116 (2001-11-01), Figura et al.
patent: 2002/0001960 (2002-01-01), Wu et al.
patent: 2002/0036302 (2002-03-01), Figura
patent: 2002/0058392 (2002-05-01), Figura et al.
patent: 2005/0026361 (2005-02-01), Graettinger et al.
patent: 2005/0045488 (2005-03-01), Paneccasio, Jr. et al.
patent: 2005/0124163 (2005-06-01), Drynan et al.
patent: 2005/0189575 (2005-09-01), Torek et al.
patent: 2005/0191584 (2005-09-01), Shea et al.
patent: 2005/0191805 (2005-09-01), Torek et al.
patent: 2005/0191856 (2005-09-01), Torek et al.
patent: 2006/0014344 (2006-01-01), Manning
patent: 2006/0141784 (2006-06-01), Paneccasio, Jr. et al.
patent: 2006/0148190 (2006-07-01), Busch et al.
patent: 2006/0157767 (2006-07-01), Drynan et al.
patent: 2006/0263979 (2006-11-01), Nejad et al.
patent: 2006/0289389 (2006-12-01), Shea
patent: 2007/0001207 (2007-01-01), Graettinger et al.
patent: 2007/0020923 (2007-01-01), Kraus et al.
patent: 2007/0262048 (2007-11-01), Rana et al.
Liu et al., ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone, Journal of the Electrochemical Society, 152 (3) G213-G219 (2005).
Busch Brett
Figura Thomas A.
Shea Kevin R.
Micro)n Technology, Inc.
Nguyen Ha Tran T
Scarlett Shaka
TraskBritt
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