Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2007-02-05

2009-11-24

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21660

Reexamination Certificate

active

07622759

ABSTRACT:
A semiconductor device includes a lower conductive layer formed on a semiconductor substrate, an interlayer insulating film that at least substantially covers the lower conductive layer, a plurality of contact holes formed in the interlayer insulating film to expose an upper surface of the lower conductive layer so that at least some of the contact holes are closer to each other in a long-axis direction than in a short-axis direction; and contact plugs that plug the contact holes. Upper portions of at least some of the contact holes have an oval shape or shapes. A method of manufacturing the semiconductor device includes forming the lower conductive layer, forming the interlayer insulating film, forming the plurality of contact holes in the interlayer insulating film to expose the upper surface of the lower conductive layer, and plugging the contact holes to form the contact plugs.

REFERENCES:
patent: 6924526 (2005-08-01), Fukuda et al.
patent: 2004-335526 (2004-11-01), None
patent: 10-1997-0003848 (1997-01-01), None
patent: 10-1999-0084311 (1999-12-01), None
patent: 10-2001-0059181 (2001-07-01), None
patent: 100307528 (2001-08-01), None
patent: 10-2001-0095943 (2001-11-01), None
Notice of Allowance from the Korean Intellectual Property Office, dated Jan. 30, 2008, for the corresponding Korean patent application (4 pp.).

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