Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2004-11-05

2008-03-25

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S981000, C148SDIG016

Reexamination Certificate

active

07348247

ABSTRACT:
Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the gate; and source and drain regions formed within the substrate at opposite sides of the gate. The gate oxide layer has a first region with a first thickness and a second region with a second thickness. The second thickness is thicker than the first thickness.

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