Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2005-11-22

2005-11-22

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000

Reexamination Certificate

active

06967142

ABSTRACT:
An example method for fabricating a semiconductor device includes forming a well, a source region, and a drain region in a substrate, forming a gate oxide film on the substrate and coating a polysilicon film on the gate oxide film. Further, the example method includes forming a trench isolation in the substrate by a dry etching process, forming a oxide film on the inside surface of the trench isolation, providing a dielectric material to fill in the trench isolation, planarizing the dielectric material to expose the top surface of the polysilicon film, and forming a gate by dry etching the polysilicon film.

REFERENCES:
patent: 6281082 (2001-08-01), Chen et al.

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