Semiconductor devices and methods of manufacturing such...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S672000, C438S687000

Reexamination Certificate

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07101788

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (102), forming a dielectric layer (104) over the semiconductor substrate (102), and etching a trench structure (106) or a via structure (106) in the dielectric layer (104) to expose a portion of a surface of the semiconductor substrate (102). The method also includes the steps of treating a surface (104a) of the dielectric layer (104) with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer (110) over the dielectric layer (104). Moreover, the adhesion solution chemically interacts with the surface (104a) of the dielectric layer (104) and enhances or increases adhesion between dielectric layer (104) and diffusion barrier layer (110).

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