Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-20
2011-11-22
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21682, C438S211000, C438S261000
Reexamination Certificate
active
08063430
ABSTRACT:
A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
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Robert White,Silicon Dioxide Etch using Buffered Hyrdofluoric Acid, Jan. 25, 2007, Tufts University, pp. 1-4.
Office Action for corresponding Japanese Patent Application No. 2004-365229 mailed Jul. 12, 2011 with English translation.
Hong Seunghun
Im Jiwoon
Lee Minbaek
Myung Sung
Budd Paul
Harness & Dickey & Pierce P.L.C.
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
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