Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-24
2009-08-04
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S585000, C438S589000
Reexamination Certificate
active
07569480
ABSTRACT:
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier region is formed in the substrate exposed by the first opening, and the first mask pattern is patterned to form a second mask pattern having a second opening. A gate insulation layer is formed on the substrate exposed by the second opening. The gate insulation layer has a variable thickness.
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Ahn Jong-Hyon
Liu Jin Hua
Harness & Dickey & Pierce P.L.C.
Kusumakar Karen M
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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