Semiconductor devices and methods of fabricating the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S585000, C438S589000

Reexamination Certificate

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07569480

ABSTRACT:
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier region is formed in the substrate exposed by the first opening, and the first mask pattern is patterned to form a second mask pattern having a second opening. A gate insulation layer is formed on the substrate exposed by the second opening. The gate insulation layer has a variable thickness.

REFERENCES:
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patent: 2001/0033000 (2001-10-01), Mistry
patent: 2001/0044191 (2001-11-01), Huang-Lu et al.
patent: 2002/0048970 (2002-04-01), Feudel et al.
patent: 2004/0058498 (2004-03-01), Huang et al.
patent: 2005/0140012 (2005-06-01), Jung
patent: 1019940010567 (1994-10-01), None
patent: 1999-0042916 (1999-06-01), None
patent: 1999-0072327 (1999-09-01), None
patent: 10-2001-0083626 (2001-09-01), None
patent: 10-2004-0000264 (2004-01-01), None
patent: 10-2005-0009485 (2005-01-01), None

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