Semiconductor devices and methods for manufacturing the same

Details Semiconductor devices and methods for manufacturing the same Semiconductor devices and methods for manufacturing the same

2005-09-13

2005-09-13

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S200000

Reexamination Certificate

active

06943079

ABSTRACT:
Certain embodiments of the present invention relate to a method for manufacturing a semiconductor device, in which, when a cell capacitor of a DRAM and a capacitor element in an analog element region are mix-mounted on the same chip, the manufacturing steps can be simplified. First, the lower electrodes55aand55bof the capacitor elements600aand600b,and the storage nodes53aand53bof the cell capacitors700aand700bare simultaneously formed. Next, a dielectric layer (ON layer61) of the capacitor elements600aand600b,and a dielectric layer (ON layer61) of the cell capacitors700aand700bare simultaneously formed. Then, the upper electrodes69aand69bof the capacitor elements600aand600band the cell plate67of the cell capacitors700aand700bare simultaneously formed.

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