Semiconductor devices and methods for fabricating the same...

Details Semiconductor devices and methods for fabricating the same... Semiconductor devices and methods for fabricating the same...

2008-07-15

2008-07-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S307000, C438S584000, C257SE21165, C257SE21199

Reexamination Certificate

active

07399669

ABSTRACT:
Semiconductor devices and methods for fabricating the same are disclosed in which an amorphous layer is formed in an interface between a device isolation layer and a source or drain region to stably thin a silicide layer formed in the interface. A leakage current of the silicide layer formed in the interface between the device isolation layer and the source/drain region is reduced.

REFERENCES:
patent: 5869377 (1999-02-01), Watabe et al.
patent: 5899732 (1999-05-01), Gardner et al.
patent: 6008111 (1999-12-01), Fushida et al.
patent: 6030863 (2000-02-01), Chang et al.
patent: 6548331 (2003-04-01), Lee et al.

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