Semiconductor devices and method for manufacturing the same

Details Semiconductor devices and method for manufacturing the same Semiconductor devices and method for manufacturing the same

2005-01-18

2005-01-18

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S172000, C257S097000, C257S103000, C257S194000

Reexamination Certificate

active

06844227

ABSTRACT:
In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.

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