Semiconductor devices and manufacturing methods

Details Semiconductor devices and manufacturing methods Semiconductor devices and manufacturing methods

2005-12-27

2005-12-27

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S239000

Reexamination Certificate

active

06979612

ABSTRACT:
A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSixis provided above the dielectric layer. The resistance element section has a resistance element comprising MoSixformed simultaneously with the electrode for the capacitive element in the same process.

REFERENCES:
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5698463 (1997-12-01), Suga
patent: 6107105 (2000-08-01), Sandhu
patent: 6211078 (2001-04-01), Mathews

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