Semiconductor devices

Details Semiconductor devices Semiconductor devices

2005-05-12

2008-09-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S565000, C257SE29027, C257SE29066

Reexamination Certificate

active

07423316

ABSTRACT:
The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p−type body region (28). The n type semiconductor region (52) is isolated from an n+type emitter region (32) and an n−type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

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Shekar et al.; “Trench Gate Emitter Switched Thyristors;” Proc. Of the 6thInternat. Symposium on Power Semiconductor Devices & IC's; Session 5: Thyristors 2; pp. 189-194; Davos, Switzerland; May 31-Jun. 2, 1994.

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