Semiconductor device with x-ray absorption layer

Details Semiconductor device with x-ray absorption layer Semiconductor device with x-ray absorption layer

1997-10-17

1999-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257310, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059397446

ABSTRACT:
In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5418388 (1995-05-01), Okudaira et al.
patent: 5442213 (1995-08-01), Okudaira et al.
patent: 5486713 (1996-01-01), Koyama
patent: 5498890 (1996-03-01), Kim et al.
patent: 5661319 (1997-08-01), Fujii et al.

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