Semiconductor device with transistors having substantial the...

Details Semiconductor device with transistors having substantial the... Semiconductor device with transistors having substantial the...

2010-01-08

2011-12-06

Cho, James H (Department: 2819)

Electronic digital logic circuitry

Significant integrated structure, layout, or layout...

C326S029000, C326S112000

Reexamination Certificate

active

08072243

ABSTRACT:
A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.

REFERENCES:
patent: 5077495 (1991-12-01), Torimaru et al.
patent: 5701094 (1997-12-01), Sridhar et al.
patent: 7256622 (2007-08-01), Dronavalli
patent: 7791373 (2010-09-01), Kurokawa
patent: 02-089365 (1990-03-01), None
patent: 02-218096 (1990-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with transistors having substantial the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with transistors having substantial the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with transistors having substantial the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4301558