Semiconductor device with thermally coupled phase change layers

Details Semiconductor device with thermally coupled phase change layers Semiconductor device with thermally coupled phase change layers

2011-06-28

2011-06-28

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S242000

Reexamination Certificate

active

07969771

ABSTRACT:
Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.

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