Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-31
2011-10-11
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S240000, C257S241000, C257S503000, C257SE27099, C356S154000
Reexamination Certificate
active
08035169
ABSTRACT:
A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG.4. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.
REFERENCES:
patent: 5396100 (1995-03-01), Yamasaki et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 6501138 (2002-12-01), Karasawa
patent: 6635936 (2003-10-01), Wuu et al.
patent: 6795332 (2004-09-01), Yamaoka et al.
patent: 7738282 (2010-06-01), Liaw
patent: 2007/0007617 (2007-01-01), Nakamura et al.
patent: 2008/0217705 (2008-09-01), Hall et al.
patent: 2007-43082 (2007-02-01), None
Abiko Minoru
Ishida Hiroshi
Ishitsuka Norio
Kijima Takehiko
Kimura Yasuhiro
Fahmy Wael
Ingham John C
Miles & Stockbridge P.C.
Renesas Electronics Corporation
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