Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-20
2008-05-20
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S390000
Reexamination Certificate
active
07375391
ABSTRACT:
A semiconductor device includes a substrate divided into a memory cell region and a logic region. A split gate electrode structure is formed in a memory cell region of a substrate. A silicon oxide layer is formed on a sidewall of the split gate electrode structure and a surface of the substrate. A word line is formed on the silicon oxide layer that is positioned on the sidewall of the split gate electrode structure. The word line has an upper width and a lower width. The lower width is greater than the upper width. A logic gate pattern is formed on a logic region of the substrate. The logic gate pattern has a thickness thinner than the lower width of the word line.
REFERENCES:
patent: 4553316 (1985-11-01), Houston et al.
patent: 5656522 (1997-08-01), Komori et al.
patent: 6541324 (2003-04-01), Wang
patent: 6563167 (2003-05-01), Chern
patent: 6784039 (2004-08-01), Hsieh
patent: 6800525 (2004-10-01), Ryu et al.
patent: 6828183 (2004-12-01), Sung et al.
patent: 2002/0146886 (2002-10-01), Chern
patent: 2003/0113969 (2003-06-01), Cho et al.
patent: 2003/0139010 (2003-07-01), Wang
patent: 2004/0023458 (2004-02-01), Hsu et al.
patent: 2004/0248367 (2004-12-01), Shyu et al.
patent: 1020020068926 (2002-08-01), None
patent: 1020030010212 (2003-02-01), None
patent: 1020030027393 (2003-04-01), None
Kwon Chul-soon
Lee Don-Woo
Lee Yong-Sun
Moon Jung-Ho
Park Jae-Hyun
Luu Chuong A.
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
LandOfFree
Semiconductor device with split gate electrode structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with split gate electrode structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with split gate electrode structure and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2747009