Semiconductor device with specifically shaped contact holes

Details Semiconductor device with specifically shaped contact holes Semiconductor device with specifically shaped contact holes

2007-05-01

2007-05-01

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S310000, C257S773000, C257S774000

Reexamination Certificate

active

10860577

ABSTRACT:
An interlayer insulating film covering a ferroelectric capacitor is formed, and through the interlayer insulating film, contact holes each reaching a capacitor electrode are formed. A wiring connected to the capacitor electrode through the contact hole is further formed above the interlayer insulating film. A planar shape of the contact hole is a regular octagon, a regular rectangle with four angles thereof being rounded, an octagon with a length of each neighboring side thereof being different to each other, a circle, and so forth.

REFERENCES:
patent: 5767541 (1998-06-01), Hanagasaki
patent: 5990508 (1999-11-01), Shinohara
patent: 6072242 (2000-06-01), Son
patent: 6174766 (2001-01-01), Hayashi et al.
patent: 6200821 (2001-03-01), Baek
patent: 6229167 (2001-05-01), Ozawa
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 6600185 (2003-07-01), Tani et al.
patent: 6708405 (2004-03-01), Hasler et al.
patent: 6809360 (2004-10-01), Kato
patent: 6927436 (2005-08-01), Ami et al.
patent: 6953950 (2005-10-01), Sashida
patent: 2002/0011615 (2002-01-01), Nagata et al.
patent: 2003/0170919 (2003-09-01), Song et al.
patent: 2003/0222299 (2003-12-01), Miura
patent: 2003/0227046 (2003-12-01), Ando et al.
patent: 2004/0033672 (2004-02-01), Matsuura et al.
patent: 2005/0244988 (2005-11-01), Wang et al.
patent: 3045928 (2000-05-01), None
patent: 3165093 (2001-05-01), None
Patent Abstracts of Japan, Publication No. 4-162652, dated Jun. 8, 1992.
Patent Abstracts of Japan, Publication No. 2001-351920, dated Dec. 21, 2001.

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