Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2007-07-03
2007-07-03
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23021, C257S773000, C257S781000, C257S737000, C257S738000, C257S775000, C257S776000, C257S701000, C257S728000, C257S724000
Reexamination Certificate
active
11233027
ABSTRACT:
A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The insulating layer is formed on a second area of the semiconductor chip so as to expose the electrode pads. The first conductive pattern provides a ground potential and is formed on the insulating layer. The second conductive pattern transfers a signal. The second conductive pattern is formed on the insulating layer and located to partially surround the first conductive pattern. The external terminals are formed on the first and second patterns at the second area.
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Oki Electric Industry Co. Ltd.
Volentine & Whitt P.L.L.C.
Williams Alexander Oscar
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