Semiconductor device with self-aligned metal-containing gate

Details Semiconductor device with self-aligned metal-containing gate Semiconductor device with self-aligned metal-containing gate

1998-09-21

2000-10-31

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257487, 257412, 257413, H01L 2976

Patent

active

061406880

ABSTRACT:
A semiconductor device is provided and formed using self-aligned metal-containing gates within a metal-oxide semiconductor (MOS) process. After forming junction regions within a semiconductor substrate, the gate conductor, or junction implant alignment structure, is at least partially removed to form a trench within a dielectric formed above the substrate. Upper surfaces of the transistor, except the upper surface of the gate conductor, are thereby protected by the dielectric. A metal-containing material can then be arranged within the trench, i.e., in the region removed of the gate conductor. The metal material can be formed either as a single layer or as multiple metal and/or dielectric layers interposed throughout the as-filled trench. The metal-filled trench formation occurs after high temperature cycles often associated with activating the previously implanted junctions or growing gate dielectrics. Thus, low-temperature metals such as copper or copper alloys can be used.

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