Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000
Reexamination Certificate
active
07911002
ABSTRACT:
A semiconductor device is provided which comprises a semiconductor layer (109), a dielectric layer (111), first and second gate electrodes (129, 131) having first and second respective work functions associated therewith, and a layer of hafnium oxide (113) disposed between said dielectric layer and said first and second gate electrodes.
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Rossow Marc
Spencer Gregory S.
Stephens Tab A.
Thean Voon-Yew
Triyoso Dina H.
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Le Thao P.
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