Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-15
2005-02-15
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S532000, C438S585000, C438S588000, C257S412000, C257SE21638, C257SE21632, C257SE21316
Reexamination Certificate
active
06855605
ABSTRACT:
A method of forming layers, in the same device material, with different thickness or layer height in a semiconductor device comprises forming device material layer or gate electrode layer disposable parts in selected regions of the device layer. The disposable parts can be formed by doping the selected regions to the desired depth d. The as-deposited thickness t of this device layer can be adjusted or modulated after the patterning of the individual devices by removing the disposable parts.
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European Search Report for European Application No. EP 01204564.7, filed Nov. 26, 2001.
Augendre Emmanuel
Badenes Goncal
Jurczak Malgorzata
Rooyackers Rita
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens & Olson Bear LLP.
Niebling John F.
Pompey Ron
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