Semiconductor device with recessed L-shaped spacer and...

Details Semiconductor device with recessed L-shaped spacer and... Semiconductor device with recessed L-shaped spacer and...

2007-11-20

2007-11-20

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257SE29122

Reexamination Certificate

active

11215103

ABSTRACT:
A semiconductor device with a recessed L-shaped spacer and a method for fabricating the same. A recessed L-shaped spacer includes a vertical portion and a horizontal portion. The vertical portion is disposed on lower sidewalls of a conductor pattern, exposing upper sidewalls thereof. A top spacer is on the L-shaped spacer, wherein a width ratio of the vertical portion of the L-shaped spacer to the top spacer is at least about 2:1.

REFERENCES:
patent: 5783479 (1998-07-01), Lin et al.
patent: 6251764 (2001-06-01), Pradeep et al.
patent: 6265271 (2001-07-01), Thei et al.
patent: 6346468 (2002-02-01), Pradeep et al.
patent: 6693013 (2004-02-01), Bae et al.
patent: 2001/0009291 (2001-07-01), Miles
patent: 2005/0124101 (2005-06-01), Beintner
patent: 2005/0242376 (2005-11-01), Chen et al.

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