Semiconductor device with recess portion over pad electrode

Details Semiconductor device with recess portion over pad electrode Semiconductor device with recess portion over pad electrode

2011-04-05

2011-04-05

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

C257S620000, C257S773000, C257SE23012, C257SE23020

Reexamination Certificate

active

07919875

ABSTRACT:
A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

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