Semiconductor device with pure copper wirings and method of manu

Details Semiconductor device with pure copper wirings and method of manu Semiconductor device with pure copper wirings and method of manu

1997-09-22

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438629, 438643, 438653, 438668, 438672, 438675, 438680, H01L 2144

Patent

active

059900083

ABSTRACT:
In a method for forming a high aspect ratio structure using copper in an ultra high-speed device, the degree of copper burying is heightened. A high aspect ratio structure, such as a fine connecting hole, is formed in a layer insulating film on a silicon substrate. Then, after a CVD-TiN film is formed to have a thickness of 10 nm on the insulating film, a copper film having a thickness of 1 .mu.m is formed. In this case, the highly pure copper film is formed by controlling film-forming conditions so as to set oxygen and sulfur concentrations in the film equal to a fixed level or lower. Thus, during its burying in the connecting hole, the surface diffusibility and fluidity of the copper film heated by means of laser irradiation are facilitated.

REFERENCES:
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patent: 4842891 (1989-06-01), Miyazaki et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5143867 (1992-09-01), D'Heurle
patent: 5370840 (1994-12-01), Caron et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5654232 (1997-08-01), Gardner

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