Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-12-27
2010-12-14
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S106000, C438S113000, C438S456000, C427S066000, C257S433000
Reexamination Certificate
active
07851246
ABSTRACT:
A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump.
REFERENCES:
patent: 4384899 (1983-05-01), Myers
patent: 6342406 (2002-01-01), Glenn et al.
patent: 6528857 (2003-03-01), Glenn et al.
patent: 6571466 (2003-06-01), Glenn et al.
patent: 6885107 (2005-04-01), Kinsman
patent: 7115961 (2006-10-01), Watkins et al.
patent: 7173231 (2007-02-01), Chen
patent: 2003/0003225 (2003-01-01), Choi et al.
patent: 2005/0184219 (2005-08-01), Kirby
patent: 2006/0170086 (2006-08-01), Song et al.
patent: 2006/0231750 (2006-10-01), Chao et al.
patent: 2006/0261340 (2006-11-01), Farnworth et al.
Bathan Henry D.
Camacho Zigmund R.
Tay Lionel Chien Hui
Trasporto Arnel Senosa
Atkins Robert D.
STATS ChipPAC Ltd.
Wojciechowicz Edward
LandOfFree
Semiconductor device with optical sensor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with optical sensor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with optical sensor and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4152879