Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-02
2007-10-02
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21655
Reexamination Certificate
active
11322289
ABSTRACT:
A substrate has an active region divided into storage node contact junction regions, channel regions and a bit line contact junction region. Device isolation layers are formed in the substrate isolating the active region from a neighboring active region Recess patterns are formed each in a trench structure and extending from a storage node contact junction region to a channel region Line type gate patterns, each filling a predetermined portion of the trench of the individual recess pattern, is formed in a direction crossing a major axis of the active region in an upper portion of the individual channel region.
REFERENCES:
patent: 5064777 (1991-11-01), Dhong et al.
patent: 6465299 (2002-10-01), Son
patent: 6573548 (2003-06-01), Leung et al.
patent: 2000-0063008 (2000-10-01), None
Blakely & Sokoloff, Taylor & Zafman
Chaudhari Chandra
Hynix / Semiconductor Inc.
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