Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-28
2009-12-29
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S280000, C438S283000, C438S295000, C438S296000, C257S259000, C257S332000, C257S347000, C257S349000, C257SE21410, C257SE21430, C257SE21442
Reexamination Certificate
active
07638398
ABSTRACT:
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.
REFERENCES:
patent: 5804848 (1998-09-01), Mukai
patent: 6794699 (2004-09-01), Bissy et al.
patent: 7101763 (2006-09-01), Anderson et al.
patent: 7390701 (2008-06-01), Cheng et al.
patent: 7456476 (2008-11-01), Hareland et al.
patent: 2005/0142700 (2005-06-01), Cheng et al.
patent: 1577850 (2005-02-01), None
patent: 05-218415 (1993-08-01), None
patent: 05-218416 (1993-08-01), None
Hynix / Semiconductor Inc.
Nguyen Dao H
Townsend and Townsend / and Crew LLP
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