Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S272000, C438S280000, C438S294000, C438S296000, C257S259000, C257S262000, C257S270000, C257S332000, C257S349000, C257SE21662, C257SE21667, C257SE27067, C257SE29242, C257SE29255
Reexamination Certificate
active
07977196
ABSTRACT:
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.
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Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Nguyen Dao H
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