Semiconductor device with force and/or acceleration sensor

Details Semiconductor device with force and/or acceleration sensor Semiconductor device with force and/or acceleration sensor

1995-06-07

1996-09-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257618, 257417, H01L 2982

Patent

active

055548750

ABSTRACT:
A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured and whose mass (16) bears via at least one resilient support element (14) on a semiconductor substrate (20). The semiconductor substrate (20) and the spring-mass system (14, 16) are integral components of a monocrystalline semiconductor crystal (10) with a IC-compatible structure. The three-dimensional structural form of the spring-mass system (12) is produced by anisotropic semiconductor etching, defined P/N junctions of the semiconductor layer arrangement functioning as etch stop means in order to more particularly create a gap (22) permitting respective movement of the mass (16) between the mass (16) and the semiconductor substrate (20).

REFERENCES:
patent: 5006487 (1991-04-01), Stokes
patent: 5121180 (1992-06-01), Beringhause et al.
patent: 5126812 (1992-06-01), Greiff
patent: 5151763 (1992-09-01), Marek et al.
patent: 5233213 (1993-08-01), Marek
Kurt E. Petersen, Silicon as a Mechanical Material, Proceedings of the IEEE, vol. 70, No. 5, May 1982, pp. (excerpt) 420, 439-442.

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